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          NXP Semiconductors BAT85 Schottky barrier single diode BAT85 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved Product data sheet 24 July 2012 2 / 8 3. Ordering information Table 3. Ordering information Package Type number Name Description Version BAT85 DO-34 hermetically sealed glass package; axial leaded; 2 leads SOD68 4. Marking Table 4. Marking codes Type number Marking code BAT85 marking band 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 30 V IF forward current - 200 mA IF(AV) average forward current δ ≤ 0.5 ; f = 20 kHz; PCB mounting, lead length = 4 mm; half sine wave - 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA IFSM non-repetitive peak forward current tp ≤ 10 ms; T j(init) = 25 °C - 5 A Tj junction temperature - 125 °C Tamb ambient temperature -65 125 °C Tstg storage temperature -65 150 °C 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 320 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. |